〇Masataka HIGASHIWAKI¹, Man Hoi Wong¹, Keita Konishi^2,1, Yoshiaki Nakata¹, Takafumi Kamimura¹, Chia-Hung Lin¹, Ken Goto^3,2, Kohei Sasaki³, Akinori Takeyama⁴, Takahiro Makino⁴, Takeshi Ohshima⁴, Akito Kuramata³, Shigenobu Yamakoshi³, Hisashi Murakami², Yoshinao Kumagai² (1.NICT, 2.Tokyo Univ. of Agri. & Tech., 3.Tamura Corp., 4.QST)

4:45 PM - 5:00 PM

[8p-A204-10] The effect of improving crystal orientation of Ga₂O₃on c-Se photoconversion layer of the Ga₂O₃/c-Se photodiode

〇Keitada Mineo¹, Shigeyuki Imura¹, Kazunori Miyakawa¹, Masakazu Namba¹, Hiroshi Ohtake¹, Misao Kubota¹ (1.NHK STRL)

Sessions

Symposium » Gallium Oxide : Novel Wide Band-Gap Oxide Material for Future Generation

[8p-A204-1~10] Gallium Oxide : Novel Wide Band-Gap Oxide Material for Future Generation

[8p-A204-1] β-Ga₂O₃ single crystal: a starting point and future expectation

[8p-A204-2] β-Ga₂O₃ Crystal Growth by Vertical Bridgeman Method

[8p-A204-3] Halide Vapor Phase Epitaxy of Meta-stable Gallium Oxides

[8p-A204-4] Current status on (Al, Ga)₂O₃ alloy system

△ [8p-A204-5] The complete solid-solution β-(Al_xGa_1-x)₂O₃ realized by the epitaxial growth

[8p-A204-6] Current Status of Power Device Market and Possibility of Gallium Oxide Type Power Device

[8p-A204-7] Prospects of Corundum-Structured α-Ga₂O₃ for Devices

[8p-A204-8] Study on Surface Band Bending of α-Ga₂O₃

[8p-A204-9] Present Status and Future Prospects of Development on Ga₂O₃ Electrical Devices ~ Power Devices and Beyond ~