[5a-A203-1~10] 15.6 Group IV Compound Semiconductors (SiC)

[5a-A203-7] Investigation on slow traps of 4H-SiC MOS capacitors based on the analysis of hysteresis of C-V characteristics observed byEvaluation of SiO₂/SiC interface deep states and near interface oxide traps by using photo illumination photo irradiation

〇Mizuki Nishida¹, Hirohisa Hirai¹, Koji Kita¹ (1.The Univ. of Tokyo)

Keywords:SiC, MOS, photo irradiation C-V technique