[5p-A301-1~19] 15.4 III-V-group nitride crystals

△ [5p-A301-6] Deep ultraviolet laser using graded AlGaN cladding layer

〇Yuta Kawase¹, jyunnya Hakamata¹, Takahumi Hayashi¹, Jyunnya Ikeda¹, Syo Iwayama¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.ARC, Nagoya Univ.)

Keywords:semiconductor, laser, ultraviolet

In this report, we clarified the cladding layer using compositionally graded structure systematically using the active layer of the 280 nm band, and report the results. In this study, the composition gradient was applied to the upper AlGaN cladding layer. In the sample without the composition gradient, the sample oscillated at a low threshold power density of about 40 kW / cm 2, and the sample with composition gradient was about 80 kW / cm 2, and the polarization mode was clear TE mode. From the above, laser oscillation with a low threshold can be confirmed even in the composition gradient structure.