[5p-C17-1~17] 13.8 Compound and power electron devices and process technology

△ [5p-C17-4] Characterization of ICP-etching induced defects at GaN surfaces using MOS structures

〇Tatsuya Oyobiki¹, Kenya Nishiguchi¹, Shinji Yamada^2,3, Hideki Sakurai^2,3, Ryuichiro Kamimura³, Yamato Osada³, Tetsu Kachi², Tamotsu Hashizume¹ (1.Hokudai Univ., 2.Nagoya Univ., 3.ULVAC)

Keywords:semiconductor, GaN