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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[6a-A201-1~12] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Sep 6, 2017 9:00 AM - 12:15 PM A201 (201)

Koji Kita(Univ. of Tokyo), Hiroaki Hanafusa(Hiroshima Univ.)

11:15 AM - 11:30 AM

▼ [6a-A201-9] Analysis of breakdown phenomena in 4H-SiC p-n junction diodes with a wide range of doping concentration

〇(M1)XILUN CHI¹, Hiroki Niwa¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:breakdown phenomena