Hot C<sup>+</sup> ion Implantation Optimization for Forming Nano-SiC Region at Surface (100)SOI Substrate

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Wed. Sep 6, 2017 9:15 AM - 12:15 PM C21 (C21)

Kazuyoshi Ueno(Shibaura Inst. of Tech), Masahide Goto(NHK)

9:15 AM - 9:30 AM

〇Yusuke Omata¹, Takashi Aoki¹, Tomokazu Sasaki², Tomohisa Mizuno¹ (1.Kanagawa Univ., 2.Toshiba Nanoanalysis Corp.)

Keywords:quantum confinement effects, photonics, ion implantation

(100)SOI基板表層でのナノ構造SiC形成用ホットC⁺イオン注入法の最適化について報告する.