The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[6a-C21-1~12] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Wed. Sep 6, 2017 9:15 AM - 12:15 PM C21 (C21)

Kazuyoshi Ueno(Shibaura Inst. of Tech), Masahide Goto(NHK)

9:45 AM - 10:00 AM

[6a-C21-3] SiCxNyOz thin films formation at RT by PECVD

Tamon Kunieda1, Toru Watanabe1, Mai Hong Minh1, Hitoshi Habuka1 (1.Yokohama Nat. Univ.)

Keywords:PECVD, SiCNO, film formation mechanism

The plasma enhanced CVD method for forming the SiCNO thin film was developed without heating assistance. Its details will be discussed.