5:15 PM - 5:30 PM
▼ [6p-C16-11] Band tail interface states and quantum capacitance in monolayer MoS2 FET
Keywords:quantum capacitance, interface states
MoS2 FETs with high-k dielectrics have attracted much attention in ultimate scaled device research because of its natural thin body without dangling bonds ideally. However, both defects such as sulfur vacancy in MoS2 and dangling bonds on the high-k oxide surface might severely degrade the MoS2/high-k interface. In order to elucidate the underlying physical origin for the interface degradation, the C-V measurement is the powerful tool because the time constant and the energy distribution of interface states (Dit) can be determined. However, unless quantum capacitance (CQ) of monolayer MoS2 is correctly extracted experimentally, the energy distribution of Dit cannot be determined. In this work, interface states are systematically evaluated as a function of EF with the help of temperature-dependent CQ extraction in order to elucidate the physical origin for the interface degradation.