[6p-C16-1~17] 機能性原子膜材料の最新応用研究と将来展望

▼ [6p-C16-11] Band tail interface states and quantum capacitance in monolayer MoS₂ FET

〇(D)Nan Fang¹、Kosuke Nagashio^1,2 (1.Tokyo Univ.、2.PRESTO-JST)

キーワード：quantum capacitance, interface states

MoS₂ FETs with high-k dielectrics have attracted much attention in ultimate scaled device research because of its natural thin body without dangling bonds ideally. However, both defects such as sulfur vacancy in MoS₂ and dangling bonds on the high-k oxide surface might severely degrade the MoS₂/high-k interface. In order to elucidate the underlying physical origin for the interface degradation, the C-V measurement is the powerful tool because the time constant and the energy distribution of interface states (D_it) can be determined. However, unless quantum capacitance (C_Q) of monolayer MoS₂ is correctly extracted experimentally, the energy distribution of D_it cannot be determined. In this work, interface states are systematically evaluated as a function of E_F with the help of temperature-dependent C_Q extraction in order to elucidate the physical origin for the interface degradation.