[6p-C21-1~20] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[6p-C21-5] Effect of substrate rotation on silicon epitaxial growth rate in minimal CVD reactor

Miya Matsuo¹, 〇Mitsuko Muroi¹, Ning Li¹, Hitoshi Habuka¹, Takanori Mikahara^2,3, Shin-ichi Ikeda^2,3, Yuuki Ishida^2,3, Shiro Hara^2,3 (1.Yokohama Nat. Univ., 2.MINIMAL, 3.AIST)

Keywords:minimal fab, epitaxial growth, growth condition

For the MINIMAL FAB, the silicon epitaxial film growth using the CVD reactor was evaluated in detail. Particularly, the effect of the wafer rotation rate will be discussed.