[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

[6p-PA8-27] Annealing of hydrogen-ion-implanted n-GaN under reverse bias

〇Ken Iyoda¹, Yutaka Tokuda¹, Kenji Shiojima², Joji Ito³, Takahide Yagi³ (1.Aichi Inst.ofTech., 2.Fukui Univ., 3.SHI-ATEX Co,Ltd.)

Keywords:n-GaN, hydrogen-ion-implanted, annealing

We have studied the reverse bias annealing of hydrogen implanted n-GaN Schottky diodes using CV and DLTS measurements. The GaN used was Si-doped (8.0x10¹⁶ cm^-3) n-GaN grown by MOCVD on n⁺-GaN substrate. The hydrogen implantation dose were 10¹³ cm^-2. The carrier concentration recovered following 30-min isochronal annealing up to 773 K, but the un-annealed fraction remained. However, further recovery of the carrier concentration occurred by the subsequent -10 V reverse bias annealing at 500 K for 200 min., while DLTS spectra showed almost no change. We will discuss the role of implanted hydrogen on the reverse bias annealing behavior.