[7a-C21-1~13] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

▲ [7a-C21-12] Characterization of (100) Surface Oriented Poly-Si Thin Films with Multi-Line Beam Continuous-Wave Laser Lateral Crystallization

〇(DC)Thuy Thi Nguyen¹, Mitsuhisa Hiraiwa¹, Tomoyuki Koganezawa², Satoshi Yasuno², Shin-Ichiro Kuroki¹ (1.Hiroshima Univ., 2.SPring-8)

Keywords:poly-Si thin film, CLC

(100) surface oriented poly-Si thin films have been highly demanded for high performance LTPS-TFTs. Using multi-line beam (MLB) continuous-wave laser lateral crystallization (CLC) with overlapping, we succeeded in controlling the (100) surface orientation of the poly-Si thin films. A high (100) surface orientation of the poly-Si thin film being comparable to that of the (100)Si single crystal was noticeably observed by 2-dimension X-ray diffraction. The orientation was significantly varied with the laser scanning speed. The results suggest that the orientation of the poly-Si thin film can be controlled at the low laser energy regime approximately the melting energy of the Si.