[7a-PB3-1~9] 13.5 デバイス／集積化技術

▲ [7a-PB3-3] Effects of gate electrode metal and drain doping concentration on electrical characteristics of Ge/Si hetero-junction tunneling FETs

〇(D)TaeEon Bae¹、Ryota Suzuki¹、Ryosho Nakane¹、Mitsuru Takenaka¹、Shinichi Takagi¹ (1.The Univ. of Tokyo)

キーワード：Tunnel FET, Gate metal, Drain doping

The influence of the gate metal and the doping concentrations in drain regions on the electrical characteristics of Ge/Si hetero-junction TFETs were experimentally studied. The higher TFET performance of high Ion and steep SS was realized in the Al gate in comparison with Ta or W. Interface state density at the Al2O3/nSi interface is lower in the Al gate metal than that in Ta and W. Furthermore, lower SS and lower Ioff were obtained for lower the P I/I dose in the drain regions, attributed to the decrease of the tunneling current in the drain junction. These results mean that the choice of appropriate gate metal materials and the doping concentration in drain regions are critical factors in Ge/Si hetero-junction TFETs.