[7a-S22-1~11] 13.8 Compound and power electron devices and process technology

[7a-S22-4] A proposal of defect density extraction method for GaN epi-wafers

〇Hiroaki Kataoka¹, Takuya Hoshii¹, Iriya Muneta¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Hiroshi Iwai², Kuniyuki Kakushima¹, Taiki Yamamoto³ (1.Tokyo Tech, 2.Tokyo Tech IIR, 3.Sumitomo Chem)

Keywords:GaN, defect density extraction