[7a-S22-1~11] 13.8 Compound and power electron devices and process technology

△ [7a-S22-5] Characterization of hole traps in n-type GaN homoepitaxial layers by optical isothermal capacitance transient spectroscopy considering thermal distribution of electrons at the edge of the depletion layer

〇Kazutaka Kanegae¹, Masahiro Horita¹, Tsunenobu Kimoto¹, Jun Suda^1,2,3 (1.Kyoto Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Univ)

Keywords:GaN, OICTS, Hole trap

In order to improve the performance of the GaN vertical power device, it is important to identify origins of deep levels in the GaN homoepitaxial layers. We have characterized hole traps in MOVPE growth n-type GaN layers by OICTS. In this study, we characterized the reverse bias voltage dependence of OICTS spectra.