[7p-A402-7~23] 8.3 Plasma deposition of thin film and surface treatment

△ [7p-A402-16] High-density convergent plasma sputtering device for liquid metal target

〇Taisei Motomura¹, Tatsuo Tabaru¹ (1.AIST)

Keywords:Sputtering, High-density plasmas, Gallium Nitride (GaN)

Gallium nitride (GaN) provides convenient applications for photonics and high-power electronic devices because of its wide band-gap material of 3.4 eV. GaN thin films are mainly produced by using MOCVD in the present day. N₂ plasma sputtering process using liquid Ga target has a potential for a greatly simplified GaN production, which can make a process control easier. In this study, a high-density convergent inductive coupled plasma sputtering device for liquid metal target is proposed to simplify a GaN thin film production.