The effect of time modulation of RF bias power on bonding structure of amorphous carbon films grown by radical injection plasma enhanced chemical vapor deposition

Hirotsugu Sugiura; Hiroki Kondo; Kenji Ishikawa; Takayoshi Tsutsumi; Keigo Takeda; Makoto Sekine; Masaru Hori

Presentation information

Oral presentation

8 Plasma Electronics » 8.3 Plasma deposition of thin film and surface treatment

[7p-A402-7~23] 8.3 Plasma deposition of thin film and surface treatment

Thu. Sep 7, 2017 3:00 PM - 7:30 PM A402 (402+403)

Yasushi Inoue(Chiba Inst. of Tech.), Yasunori Ohtsu(Saga Univ.)

6:00 PM - 6:15 PM

△ [7p-A402-18] The effect of time modulation of RF bias power on bonding structure of amorphous carbon films grown by radical injection plasma enhanced chemical vapor deposition

〇Hirotsugu Sugiura¹, Hiroki Kondo¹, Kenji Ishikawa¹, Takayoshi Tsutsumi¹, Keigo Takeda², Makoto Sekine¹, Masaru Hori³ (1.Nagoya Univ. Eng., 2.Meijo Univ., 3.Nagoya Univ. Inst. of Innovation for Future Society)

Keywords:PECVD, amorphous carbon, DLC