[7p-C18-1~11] Film Formation and Low Temperature of IV Element Semiconductor

[7p-C18-9] Crystallization of amorphous Si using metal nano catalyst and its device application

〇Yukiharu Uraoka¹, Shinya Kumagai², Ichiro Yamashita¹ (1.NAIST, 2.Toyota Tech. Inst.)

Keywords:Polysilicon thin film, Metal catalyst, Low temperature crystallization

High quality polycrystalline silicon thin film capable of low temperature formation is very important for realization of high performance thin film device. We attempted to form silicon polycrystalline film using nanoscale metal catalysts. As this metal catalyst, nanoparticles in which ferrous oxide, which is the core of the protein, called ferritin, was replaced with nickel oxide was used. A high quality polycrystalline thin film with low impurity density was obtained by adsorbing this nanoparticle on amorphous silicon and performing low temperature annealing.