9:30 AM - 9:45 AM
[8a-C21-2] Simultaneous observation of the diffusion of self-atoms and co-implanted boron and fluorine in silicon investigated by isotope heterostructures
Keywords:semiconductor, isotopes, transient enhanced diffusion
Formation of ultra-shallow junction, which is a key to realize the scaling down of Si devices, requires understanding the behaviors of point defects in Si. F is known to be effective for reducing transient-enhanced diffusion of B, where it has been often introduced through BF2+ ion implantation for obtaining shallow profiles. In order to clarify the mechanism, the effect of F on Si self- and B diffusion is investigated using Si isotope heterostructures.