[8a-C21-1~11] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[8a-C21-2] Simultaneous observation of the diffusion of self-atoms and co-implanted boron and fluorine in silicon investigated by isotope heterostructures

〇(M2)Ryotaro Kiga¹, Masashi Uematsu^1,2, Kohei Itoh^1,2 (1.Keio Univ., 2.Keio Univ. TCAD Research and Development Center)

Keywords:semiconductor, isotopes, transient enhanced diffusion

Formation of ultra-shallow junction, which is a key to realize the scaling down of Si devices, requires understanding the behaviors of point defects in Si. F is known to be effective for reducing transient-enhanced diffusion of B, where it has been often introduced through BF₂⁺ ion implantation for obtaining shallow profiles. In order to clarify the mechanism, the effect of F on Si self- and B diffusion is investigated using Si isotope heterostructures.