[8a-C21-1~11] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[8a-C21-6] Investigation of Ge Etching Characteristics by HBr Neutral Beam

〇Shuichi Noda¹, Yosuke Tanimoto², Takuya Ozaki¹, Hideyuki Kurihara², Yasuyuki Hoshino², Kazuhiko Endo^1,3, Seiji Samukawa^1,2 (1.Tohoku Univ., 2.SHOWA DENKO, 3.AIST)

Keywords:Ge FinFET, Neutral Beam Etching, HBr