Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[15a-412-1~10] 6.2 Carbon-based thin films

Wed. Mar 15, 2017 9:00 AM - 11:45 AM 412 (412)

Hideaki Yamada(AIST), Tsuyoshi Yoshitake(Kyushu Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [15a-412-1] Improvement in quality of epitaxial Ir film on α-Al₂O₃(0001) by depositing under high temperature

〇Jin Kitazaki¹, Yuki Koba¹, Kimiyoshi Ichikawa¹, Hideyuki Kodama¹, Seongwoo Kim², Hideo Aida², Kazuhiro Suzuki³, Atsuhito Sawabe¹ (1.Aoyama Gakuin Univ., 2.NAMIKI PRECISION JEWEL CO.LTD., 3.TOPLAS ENGINEERING CO.LTD.)

9:15 AM - 9:30 AM

△ [15a-412-2] Fabrication and evaluation of epitaxial diamond grown on Ir film deposited under high temperature.

〇Yuki Koba¹, Hideyuki Kodama¹, Daiki Fujii², Seongwoo Kim², Hideo Aida², Kazuhiro Suzuki³, Atsuhito Sawabe¹ (1.Aoyama Gakuin Univ., 2.NAMIKI PRECISION JEWEL, 3.TOPLAS ENGINEERING)

9:30 AM - 9:45 AM

[15a-412-3] Highly-Oriented Diamond on Si(111) by High Oxygen Concentration Growth

〇Takeru Suto^1,2, Shinnosuke Kuwabara¹, Junya Yaita^1,2, Takayuki Iwasaki^1,2, Mutsuko Hatano^1,2 (1.Tokyo Tech., 2.JST-CREST)

9:45 AM - 10:00 AM

△ [15a-412-4] Effect of crystallographic orientation on defect formation in heteroepitaxial diamond from grid-patterned nucleation region

〇Kimiyoshi Ichikawa¹, Hideyuki Kodama¹, Kazuhiro Suzuki², Atsuhito Sawabe¹ (1.Aoyama Gakuin Univ., 2.TOPLAS ENGINEERING Co.)

10:00 AM - 10:15 AM

△ [15a-412-5] Diamond deposition by remote plasma-enhanced CVD for selective-growth

〇Haruka Hoshino¹, Masafumi Inaba¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Waseda Zaiken)

10:30 AM - 10:45 AM

[15a-412-6] Development of diamond nucleation equipment using micro discharge device

〇Hiroaki Murayama¹, Hideyuki Kodama¹, Fujii Daiki², Kim Seongwoo², Aida Hideo², Suzuki Kazuhiro³, Sawabe Atsuhito¹ (1.Aoyama Gakuin University, 2.Namiki Precision Jewel, 3.TOPLAS Engineering)

10:45 AM - 11:00 AM

△ [15a-412-7] Formation of GeV centers in CVD diamond deposited on Ge substrate

〇(B)Daiya Nishijima¹, Yuta Osoekawa¹, Motoi Nakao¹, Toshiki Tubota¹, Shinji Nagamati² (1.Kyusyu Inst., 2.Nagamachi science labo.)

11:00 AM - 11:15 AM

[15a-412-8] Electrochemical property of boron doped diamond grown on hetero-epitaxial diamond Ⅱ

〇Makoto Ito¹, Hideyuki Kodama¹, Kazuhiro Suzuki², Atsuhito Sawabe¹ (1.Aoyama Gakuin Univ., 2.TOPLAS ENGINEERING CO.Ltd)

11:15 AM - 11:30 AM

[15a-412-9] Optical properties of nano-polycrystalline diamond synthesized by high pressure and high temperature technique

〇Rei Fukuta¹, Akihiro Ishikawa¹, Fumitaro Ishikawa¹, Masashi Matsushita¹, Hiroaki Ohfuji², Toru Shinmei², Tetsuo Irifune² (1.Ehime Univ, 2.Ehime Univ. GRC)

11:30 AM - 11:45 AM

[15a-412-10] Effect of nitrogen-doping on Ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition

〇Hiroki Gima¹, Yuki Katamune², Ryota Ohtani³, Satoshi Koizumi³, Tsuyoshi Yoshitake¹ (1.Kyushu Univ., 2.Kyutech, 3.NIMS)

Session information

[15a-412-1~10] 6.2 Carbon-based thin films

△ [15a-412-1] Improvement in quality of epitaxial Ir film on α-Al₂O₃(0001) by depositing under high temperature

△ [15a-412-2] Fabrication and evaluation of epitaxial diamond grown on Ir film deposited under high temperature.

[15a-412-3] Highly-Oriented Diamond on Si(111) by High Oxygen Concentration Growth

△ [15a-412-4] Effect of crystallographic orientation on defect formation in heteroepitaxial diamond from grid-patterned nucleation region

△ [15a-412-5] Diamond deposition by remote plasma-enhanced CVD for selective-growth

[15a-412-6] Development of diamond nucleation equipment using micro discharge device

△ [15a-412-7] Formation of GeV centers in CVD diamond deposited on Ge substrate

[15a-412-8] Electrochemical property of boron doped diamond grown on hetero-epitaxial diamond Ⅱ

[15a-412-9] Optical properties of nano-polycrystalline diamond synthesized by high pressure and high temperature technique

[15a-412-10] Effect of nitrogen-doping on Ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition

Authentication

Session information

[15a-412-1~10] 6.2 Carbon-based thin films

△ [15a-412-1] Improvement in quality of epitaxial Ir film on α-Al2O3(0001) by depositing under high temperature

△ [15a-412-2] Fabrication and evaluation of epitaxial diamond grown on Ir film deposited under high temperature.

[15a-412-3] Highly-Oriented Diamond on Si(111) by High Oxygen Concentration Growth

△ [15a-412-4] Effect of crystallographic orientation on defect formation in heteroepitaxial diamond from grid-patterned nucleation region

△ [15a-412-5] Diamond deposition by remote plasma-enhanced CVD for selective-growth

[15a-412-6] Development of diamond nucleation equipment using micro discharge device

△ [15a-412-7] Formation of GeV centers in CVD diamond deposited on Ge substrate

[15a-412-8] Electrochemical property of boron doped diamond grown on hetero-epitaxial diamond Ⅱ

[15a-412-9] Optical properties of nano-polycrystalline diamond synthesized by high pressure and high temperature technique

[15a-412-10] Effect of nitrogen-doping on Ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition

Authentication

△ [15a-412-1] Improvement in quality of epitaxial Ir film on α-Al₂O₃(0001) by depositing under high temperature