Oral presentation

[14a-501-1~11] 10.3 Spin devices, magnetic memories and storages

10.1と10.2と10.3と10.4のコードシェアセッションあり

Tue. Mar 14, 2017 9:00 AM - 12:00 PM 501 (501)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

▲ [14a-501-1] Underlayer dependence of magnetoresistance effect in tunnel junctions with Co₂Fe_0.4Mn_0.6Si electrodes

〇(D)Mingling Sun^1,2, Shigeki Takahashi³, Takahide Kubota^2,4, Yoshiaki Sonobe³, Koki Takanashi^2,4 (1.Grad. School of Eng., Tohoku Univ., 2.IMR, Tohoku Univ., 3.Samsung R&D Institute Japan, 4.CSRN, Tohoku Univ.)

9:15 AM - 9:30 AM

▲ [14a-501-2] Enhanced CPP-GMR effect by improved B2 order of Co₂(Mn_0.6Fe_0.4)Ge Heusler layer deposited on amorphous CoFeBTa underlayer: a quantitative estimation of site-disorder by anomalous x-ray diffraction

〇(PC)Songtian Li¹, Tomoya Nakatani¹, Yuya Sakuraba¹, Hiroo Tajini², Takao Furubayashi¹, Kazuhiro Hono¹ (1.National Institute for Materials Science, 2.Japan Synchrotron Radiation Research Institute/SPring-8)

9:30 AM - 9:45 AM

▲ [14a-501-3] Theoretical study for magnetic tunneling junctions including semiconductor barriers CuInSe₂ and CuGaSe₂

〇Keisuke Masuda¹, Yoshio Miura^1,2 (1.NIMS, 2.KIT)

9:45 AM - 10:00 AM

▲ [14a-501-4] Analysis of bulk spin-polarization in Co₂FeGa_0.5Ge_0.5 thin films via anisotropic magnetoresistance effect

〇Yuya Sakuraba¹, Satoshi Kokado², Tomoya Nakatane¹, Li Songtian¹, Takao Furubayashi¹, Hiroo Tajiri³, Yoshio Miura^1,4, Kazuhiro Hono¹ (1.NIMS, 2.Shizuoka Univ., 3.JASRI, 4.KIT)

10:00 AM - 10:15 AM

▼ [14a-501-5] Magnetic tunnel junctions with a Li-substituted MgAl₂O₄ barrier

〇Thomas Scheike¹, Hiroaki Sukegawa¹, Seiji Mitani^1,2 (1.NIMS, 2.Univ. Tsukuba)

10:30 AM - 10:45 AM

▲ [14a-501-6] Effects of layer thickness and microstructure of CPP-GMR with Ag/InZnO/Zn spacer

〇Tomoya Nakatani¹, Taisuke Sasaki¹, Songtian Li¹, Yuya Sakuraba¹, Takao Furubayashi¹, Kazuhiro Hono¹ (1.NIMS)

10:45 AM - 11:00 AM

▼ [14a-501-7] Large magnetoresistance effect in magnetic tunnel junctions with a Cu(In_0.8Ga_0.2)Se₂ barrier with a low resistance-area product

〇Koki Mukaiyama¹, Keisuke Masuda¹, Shinya Kasai^1,2, Yukiko Takahashi¹, Pohang Cheng^1,3, Ikhtiar Ikhtiar^1,3, Yoshio Miura^1,4, Tadakatsu Ohkubo¹, Seiji Mitani^1,3, Kazuhiro Hono^1,3 (1.NIMS, 2.RIKEN, 3.Univ. of Tsukuba, 4.Kyoto Inst. of Tech.)

11:00 AM - 11:15 AM

▼ [14a-501-8] Time-resolved measurement of spin-transfer-torque-induced magnetization switching in CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis

〇(M2)Naoki Ohshima¹, Hideo Sato^1,2,3,4, Shun Kanai^1,2,4, Shunsuke Fukami^1,2,3,4, Justin Llandro^1,4, Fumihiro Matsukura^1,2,4,5, Hideo Ohno^1,2,3,4,5 (1.RIEC, Tohoku Univ., 2.CSRN, Tohoku Univ., 3.CSIS, Tohoku Univ., 4.CIES, Tohoku Univ., 5.WPI-AIMR, Tohoku Univ.)

11:15 AM - 11:30 AM

▼ [14a-501-9] Resonant Magnetization Switching Conditions of an Exchange Coupled Bilayer under Spin Wave Excitation

〇(PC)Weinan Zhou¹, Toshiki Yamaji², Takeshi Seki^1,3,4, Hiroshi Imamura², Koki Takanashi^1,4 (1.IMR, Tohoku Univ., 2.AIST, 3.JST PRESTO, 4.CSRN, Tohoku Univ.)

11:30 AM - 11:45 AM

▼ [14a-501-10] Fabrication of Single Crystalline Magnetoresistive Sensors on Polycrystalline Electrode using Three-Dimensional Integration Technology

〇(DC)Jiamin CHEN^1,3, Yuya Sakuraba¹, Jun Liu¹, Kay Yakushiji², Hideki Takagi², Naoya Watanabe², Akio Fukushima², Katsuya Kikuchi², Shinji Yuasa², Kazuhiro Hono^1,3 (1.NIMS, 2.AIST, 3.Tsukuba Univ.)

11:45 AM - 12:00 PM

▼ [14a-501-11] Magnetic tunnel junctions using perpendicularly magnetized synthetic antiferromagnetic reference layer for wide-dynamic-range magnetic sensors

〇(D)Takafumi Nakano¹, Mikihiko Oogane¹, Takamoto Furuichi², Yasuo Ando^1,3 (1.Tohoku Univ., 2.DENSO CORP., 3.CSRN)

Oral presentation

[14p-501-1~6] 10.3 Spin devices, magnetic memories and storages

10.1と10.2と10.3と10.4のコードシェアセッションあり

Tue. Mar 14, 2017 1:00 PM - 2:30 PM 501 (501)

Yuya Sakuraba(NIMS)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:00 PM - 1:15 PM

▼ [14p-501-1] Large spin torque diode voltage by resonant expulsion of vortex core

〇Sumito Tsunegi¹, Kay Yakushiji¹, Akio Fukushima¹, Yuasa Shinji¹, Hitoshi Kubota¹ (1.AIST)

1:15 PM - 1:30 PM

▲ [14p-501-2] Voltage dependence of spectra in elliptical shaped STOs with different aspect ratio

〇BOCHONG WANG¹, HITOSHI KUBOTA¹, KAY YAKUSHIJI¹, SHINGO TAMARU¹, AKIO FUKUSHIMA¹, SHINJI YUASA¹ (1.AIST)

1:30 PM - 1:45 PM

▲ [14p-501-3] Relation between Emission Power and Diameter of Spin Torque Oscillator: Micromagnetic Simulation Study

〇Tomohiro Tanaka¹, Atsushi Furuya¹, Yuji Uehara¹, Koichi Shimizu¹, Jun Fujisaki¹, Hirotaka Oshima², Hitoshi Kubota³, Hiroshi Imamura³ (1.Fujitsu Ltd., 2.Fujitsu Labs. Ltd., 3.AIST)

1:45 PM - 2:00 PM

▲ [14p-501-4] Magnetization Switching Assisted by Microwave Magnetic Field Emitted from a Spin-Torque Oscillator

〇Hirofumi Suto¹, Taro Kanao¹, Tazumi Nagasawa¹, Kiwamu Kudo¹, Koichi Mizushima¹, Rie Sato¹ (1.Toshiba R&D Center)

2:00 PM - 2:15 PM

▲ [14p-501-5] Microwave-assisted magnetization switching using double-frequency component of in-plane magnetized spin-torque oscillator: Micromagnetic simulation study

〇Taro Kanao¹, Hirofumi Suto¹, Kiwamu Kudo¹, Tazumi Nagasawa¹, Koichi Mizushima¹, Rie Sato¹ (1.Toshiba R&D Center)

2:15 PM - 2:30 PM

△ [14p-501-6] Current-driven Dynamics in Vertically-Coupled Co₂(Fe,Mn)Si Vortex Paris

〇Tatsuya Yamamoto¹, Takeshi Seki^1,2,3, Koki Takanashi^1,3 (1.IMR, Tohoku Univ., 2.JST-PRESTO, 3.CSRN, Tohoku Univ.)

Sessions

10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[14a-501-1~11] 10.3 Spin devices, magnetic memories and storages

10.1と10.2と10.3と10.4のコードシェアセッションあり

▲ [14a-501-1] Underlayer dependence of magnetoresistance effect in tunnel junctions with Co₂Fe_0.4Mn_0.6Si electrodes

▲ [14a-501-2] Enhanced CPP-GMR effect by improved B2 order of Co₂(Mn_0.6Fe_0.4)Ge Heusler layer deposited on amorphous CoFeBTa underlayer: a quantitative estimation of site-disorder by anomalous x-ray diffraction

▲ [14a-501-3] Theoretical study for magnetic tunneling junctions including semiconductor barriers CuInSe₂ and CuGaSe₂

▲ [14a-501-4] Analysis of bulk spin-polarization in Co₂FeGa_0.5Ge_0.5 thin films via anisotropic magnetoresistance effect

▼ [14a-501-5] Magnetic tunnel junctions with a Li-substituted MgAl₂O₄ barrier

▲ [14a-501-6] Effects of layer thickness and microstructure of CPP-GMR with Ag/InZnO/Zn spacer

▼ [14a-501-7] Large magnetoresistance effect in magnetic tunnel junctions with a Cu(In_0.8Ga_0.2)Se₂ barrier with a low resistance-area product

▼ [14a-501-8] Time-resolved measurement of spin-transfer-torque-induced magnetization switching in CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis

▼ [14a-501-9] Resonant Magnetization Switching Conditions of an Exchange Coupled Bilayer under Spin Wave Excitation

▼ [14a-501-10] Fabrication of Single Crystalline Magnetoresistive Sensors on Polycrystalline Electrode using Three-Dimensional Integration Technology

▼ [14a-501-11] Magnetic tunnel junctions using perpendicularly magnetized synthetic antiferromagnetic reference layer for wide-dynamic-range magnetic sensors

[14p-501-1~6] 10.3 Spin devices, magnetic memories and storages

10.1と10.2と10.3と10.4のコードシェアセッションあり

▼ [14p-501-1] Large spin torque diode voltage by resonant expulsion of vortex core

▲ [14p-501-2] Voltage dependence of spectra in elliptical shaped STOs with different aspect ratio

▲ [14p-501-3] Relation between Emission Power and Diameter of Spin Torque Oscillator: Micromagnetic Simulation Study

▲ [14p-501-4] Magnetization Switching Assisted by Microwave Magnetic Field Emitted from a Spin-Torque Oscillator

▲ [14p-501-5] Microwave-assisted magnetization switching using double-frequency component of in-plane magnetized spin-torque oscillator: Micromagnetic simulation study

△ [14p-501-6] Current-driven Dynamics in Vertically-Coupled Co₂(Fe,Mn)Si Vortex Paris

Authentication

Sessions

10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[14a-501-1~11] 10.3 Spin devices, magnetic memories and storages

10.1と10.2と10.3と10.4のコードシェアセッションあり

▲ [14a-501-1] Underlayer dependence of magnetoresistance effect in tunnel junctions with Co2Fe0.4Mn0.6Si electrodes

▲ [14a-501-2] Enhanced CPP-GMR effect by improved B2 order of Co2(Mn0.6Fe0.4)Ge Heusler layer deposited on amorphous CoFeBTa underlayer: a quantitative estimation of site-disorder by anomalous x-ray diffraction

▲ [14a-501-3] Theoretical study for magnetic tunneling junctions including semiconductor barriers CuInSe2 and CuGaSe2

▲ [14a-501-4] Analysis of bulk spin-polarization in Co2FeGa0.5Ge0.5 thin films via anisotropic magnetoresistance effect

▼ [14a-501-5] Magnetic tunnel junctions with a Li-substituted MgAl2O4 barrier

▲ [14a-501-6] Effects of layer thickness and microstructure of CPP-GMR with Ag/InZnO/Zn spacer

▼ [14a-501-7] Large magnetoresistance effect in magnetic tunnel junctions with a Cu(In0.8Ga0.2)Se2 barrier with a low resistance-area product

▼ [14a-501-8] Time-resolved measurement of spin-transfer-torque-induced magnetization switching in CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis

▼ [14a-501-9] Resonant Magnetization Switching Conditions of an Exchange Coupled Bilayer under Spin Wave Excitation

▼ [14a-501-10] Fabrication of Single Crystalline Magnetoresistive Sensors on Polycrystalline Electrode using Three-Dimensional Integration Technology

▼ [14a-501-11] Magnetic tunnel junctions using perpendicularly magnetized synthetic antiferromagnetic reference layer for wide-dynamic-range magnetic sensors

[14p-501-1~6] 10.3 Spin devices, magnetic memories and storages

10.1と10.2と10.3と10.4のコードシェアセッションあり

▼ [14p-501-1] Large spin torque diode voltage by resonant expulsion of vortex core

▲ [14p-501-2] Voltage dependence of spectra in elliptical shaped STOs with different aspect ratio

▲ [14p-501-3] Relation between Emission Power and Diameter of Spin Torque Oscillator: Micromagnetic Simulation Study

▲ [14p-501-4] Magnetization Switching Assisted by Microwave Magnetic Field Emitted from a Spin-Torque Oscillator

▲ [14p-501-5] Microwave-assisted magnetization switching using double-frequency component of in-plane magnetized spin-torque oscillator: Micromagnetic simulation study

△ [14p-501-6] Current-driven Dynamics in Vertically-Coupled Co2(Fe,Mn)Si Vortex Paris

Authentication

▲ [14a-501-1] Underlayer dependence of magnetoresistance effect in tunnel junctions with Co₂Fe_0.4Mn_0.6Si electrodes

▲ [14a-501-2] Enhanced CPP-GMR effect by improved B2 order of Co₂(Mn_0.6Fe_0.4)Ge Heusler layer deposited on amorphous CoFeBTa underlayer: a quantitative estimation of site-disorder by anomalous x-ray diffraction

▲ [14a-501-3] Theoretical study for magnetic tunneling junctions including semiconductor barriers CuInSe₂ and CuGaSe₂

▲ [14a-501-4] Analysis of bulk spin-polarization in Co₂FeGa_0.5Ge_0.5 thin films via anisotropic magnetoresistance effect

▼ [14a-501-5] Magnetic tunnel junctions with a Li-substituted MgAl₂O₄ barrier

▼ [14a-501-7] Large magnetoresistance effect in magnetic tunnel junctions with a Cu(In_0.8Ga_0.2)Se₂ barrier with a low resistance-area product

△ [14p-501-6] Current-driven Dynamics in Vertically-Coupled Co₂(Fe,Mn)Si Vortex Paris