The 64th JSAP Spring Meeting, 2017

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13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[14a-304-1~10] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Tue. Mar 14, 2017 9:15 AM - 12:00 PM 304 (304)

Takashi Noguchi(Univ. of the Ryukyus), Seiichiro Higashi(Hiroshima Univ.), Taizoh Sadoh(Kyushu Univ.)

9:45 AM - 10:00 AM

[14a-304-3] Crystallization and Activation of As+ doped Amorphous Ge films by Excimer Laser Annealing

〇Hiroki Tamaru1, Hiroshi Ikenoue2, Seiichiro Higashi1 (1.Graduate School of Advanced Sciences of Matter, Hiroshima Univ., 2.Department of Gigaphoton Next GLP, Kyushu Univ.)

Keywords:Germanium, Excimer laser