[14a-304-1~10] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

△ [14a-304-5] CMOS Inverter on Glass Substrate using V_th Control of Self-Aligned Four-Terminal Planar Metal Double-Gate Low-Temperature Poly- Si TFTs

〇Hiroki Ohsawa¹, Akito Hara¹ (1.Tohoku Gakuin Univ.)

Keywords:TFT, poly-Si, CMOS inverter

We fabricated a CMOS inverter on glass substrate consisting of self-aligned four-terminal planar metal double-gate low-temperature poly-Si TFTs. By controlling the V_th of four-terminal TFTs around 0 V using the control voltage, excellent CMOS inverter characteristics in which the transition occurs at V_dd/2 were obtained at V_dd = 1.0 V.