[14p-P3-1~19] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[14p-P3-16] A Study on Damping Constant of MEMS Inertial Sensor by Multi-Layer Metal Technology

〇Toshifumi Konishi¹, Daisuke Yamane^2,4, Teruaki Safu¹, Masato Sone^2,4, Hiroshi Toshiyoshi^3,4, Kazuya Masu^2,4, Katsuyuki Machida^1,2,4 (1.NTT-AT, 2.Tokyo Tech., 3.Univ. of Tokyo, 4.JST-CREST)

Keywords:MEMS, inertial sensor, damping constant

This paper reports a study on damping constant of capacitive MEMS inertial sensor to achieve small size and high sensitivity by multi-layer metal technology. From the experimental evaluation results with fabricated devices, we investigate the relationship between the damping constant and the structure parameters. As a result, we propose the damping constant model based on the structure parameters.