[15p-315-1~17] 13.8 Compound and power electron devices and process technology

[15p-315-7] Interface properties of SiO₂/GaN formed by Remote-plasma-assisted CVD

〇TRUYEN XUAN NGUYEN^1,2, Noriyuki Taoka², Akio Ohta¹, Taishi Yamamoto^1,2, Hisashi Yamada², Tokio Takahashi², Mitsuhisa Ikeda¹, Katsunori Makihara¹, Mitsuaki Shimizu², Seiichi Miyazaki¹ (1.Nagoya Univ., 2.AIST GaN-OIL)

Keywords:SiO2/GaN Interface, Remote Plasma CVD