[15p-P14-1~11] 13.3 Insulator technology

[15p-P14-10] Development of Formation Technique of Gate SiO2 Layer for GaN Power Transistors

〇Takuya Maekawa¹, Shiniti Ogiso¹, Keisuke Arimoto¹, JunJi Yamanaka¹, Tetuji Arai¹, Kiyokazu Nakagawa¹, Toshiyuki Takamatsu², Katunori Ueno³ (1.Yamanashi Univ., 2.SST, 3.Fujidenki)

Keywords:insulating film, SiO2, GaN