Ti-Si-C Ohmic contact formation by laser annealing on n<sup>+</sup> 4H-SiC C face

Presentation information

Poster presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Thu. Mar 16, 2017 9:30 AM - 11:30 AM P5 (BP)

9:30 AM - 11:30 AM

〇Desilva Milantha¹, Teruhisa Kawasaki², Takamaro Kikkawa¹, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ. RNBS, 2.Sumitomo Heavy Industries Ltd.)

Keywords:SiC, Ohmic, Laser annealing