Effects of surface etching with CF<sub>4 </sub>on 4H-SiC MOS Capacitors

Kiichi Kobayakawa; Kousuke Muraoka; Hiroshi Sezaki; Seiji Ishikawa; Tomonori Maeda; Takamaro Kikkawa; Shin-Ichiro Kuroki

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Poster presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[16a-P5-1~15] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Mar 16, 2017 9:30 AM - 11:30 AM P5 (BP)

9:30 AM - 11:30 AM

[16a-P5-7] Effects of surface etching with CF₄on 4H-SiC MOS Capacitors

〇(B)Kiichi Kobayakawa¹, Kousuke Muraoka¹, Hiroshi Sezaki^1,2, Seiji Ishikawa^2,1, Tomonori Maeda^2,1, Takamaro Kikkawa¹, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ. RNBS, 2.Phenitec)

Keywords:4H-SiC, MOS, Etching with CF4

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Presentation information

[16a-P5-1~15] 15.6 Group IV Compound Semiconductors (SiC)

[16a-P5-7] Effects of surface etching with CF4 on 4H-SiC MOS Capacitors

[16a-P5-7] Effects of surface etching with CF₄on 4H-SiC MOS Capacitors