Effects of source impurity concentration on electrical characteristics of GaAsSb/InGaAs TFET

Takahiro Gotow; Manabu Mitsuhara; Takuya Hoshi; Hiroki Sugiyama; Mitsuru Takenaka; Shinichi Takagi

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

[16p-412-1~20] 13.5 Semiconductor devices and related technologies

6.1と13.3と13.5のコードシェアセッションあり

Thu. Mar 16, 2017 1:15 PM - 6:30 PM 412 (412)

Keiji Ikeda(TOSHIBA), Masaharu Kobayashi(Univ. of Tokyo)

2:30 PM - 2:45 PM

△ [16p-412-6] Effects of source impurity concentration on electrical characteristics of GaAsSb/InGaAs TFET

〇(D)Takahiro Gotow¹, Manabu Mitsuhara², Takuya Hoshi², Hiroki Sugiyama², Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo, 2.NTT)

Keywords:TFET, GaAsSb

GaAsSb/InGaAs Type-II hetero TFET has been proposed as potential candidates for steep slope devices, since it can be made small effective band-gaps in source/channel region. In line with this, effects of source impurity concentration on electrical characteristics of GaAsSb/InGaAs TFET are investigated and high on current and low S.S. value are achieved.