The 64th JSAP Spring Meeting, 2017

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Symposium (Oral)

Symposium » Process technology for advanced power semiconductor devices

[16p-502-1~10] Process technology for advanced power semiconductor devices

Thu. Mar 16, 2017 1:45 PM - 6:30 PM 502 (502)

Mutsuko Hatano(Titech), Masahiro Ishida(Panasonic), Katsuhiko Nishiwaki(Toyota)

3:15 PM - 3:30 PM

△ [16p-502-4] Oxygen pressure controlled oxidation for gate insulator process of SiC MOSFET

〇Keisuke Kobayashi1, Haruka Shimizu1, Akio Shima1 (1.Hitachi, Ltd. R&D Group)

Keywords:Silicon carbide, Gate oxide