[17p-301-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[17p-301-2] Impact of wet-oxidation condition on interface state density and bias stress instability of SiO₂/4H-SiC m-face interface formed by dry- and wet-oxidation

Kohei Kuroyama¹, Hirohisa Hirai¹, Kensaku Yamamoto², Mariko Hayashi², Norikazu Hosokawa², 〇Koji Kita¹ (1.Univ. of Tokyo, 2.DENSO CORP.)

Keywords:4H-SiC, m-face, MOS chacteristics

Even though wet- and dry-oxidation processes of 4H-SiC result in significantly different MOS interface characteristics, the mechanisms of such difference has not been clarified. In this presentation the characteristics of MOS interface fabricated by the combination of dry-oxidation and additional wet-oxidation from the viewpoints of the reduction of interface state density and the change of Vfb stability against electrical stress.