[17p-301-1~11] 15.6 Group IV Compound Semiconductors (SiC)

△ [17p-301-9] Reduction of Hall Effect Mobility in SiC MOS Inversion Layer

〇Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Amishiro Hiroyuki¹, Hiroshi Watanabe¹, Shuhei Nakata¹, Takeharu Kuroiwa¹, Koji Kita², Satoshi Yamakawa¹ (1.Mitsubishi Electric, 2.Univ. of Tokyo)

Keywords:SiC, inversion layer mobility, Hall effect mobility

Recently, Hall effect mobility in SiC MOS inversion layer (µ_hall) has been investigated. It has been reported that Coulomb scattering is one of the dominant scattering mechanisms in SiC MOS inversion layer. It is known that µ_hall in SiC MOS inversion layer reduces with increasing the acceptor concentration. However, the reduction mechanism has not fully examined yet. In this study, we examined the reduction mechanism through averaged position of carriers in SiC MOS inversion layer. In conclusion, the reduction of µ_hall in SiC MOS inversion layer is caused by the reduced Coulomb scattering mobility due to closer carrier shift toward the MOS interface.