[17p-304-1~15] CS.2 6.1/13.3/13.5 Code-sharing Session

[17p-304-12] Study on Short Channel Effects in Negative Capacitance FinFETs Based on
Technology Computer-Aided Design Simulation

〇Hiroyuki Ota¹, Tsutomu Ikegami¹, Junichi Hattori¹, Koichi Fukuda¹, Shinji Migita¹, Akira Toriumi² (1.AIST, 2.Univ. of Tokyo)

Keywords:semiconductor, ferroelectric gate insulator, steep slope transistor

Short channel effects of negative capacitance FinFETs (NC-FinFETs)in 10 - 100 nm gate length are analyzed with a newly developed technology computer-aided design (TCAD) simulation. This simulation fully couples the Landau-Khalatnikov (L-K) equation with the physical equations for FinFETs and reveals novel DIBL effects. It is important to factor in such the novel short channel effects for realising the NC-FinFETs using a ferroelectric gate insulator.