5:15 PM - 5:30 PM △ [20p-438-14] A Characterization Technique of Plasma Process-Induced Latent Defects in Si Substrate by Isothermal Capacitance Transient Spectroscopy 〇Takashi Hamano1, Keiichiro Urabe1, Koji Eriguchi1 (1.Kyoto Univ.)