Oral presentation

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[20p-438-1~21] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Thu. Sep 20, 2018 1:45 PM - 7:15 PM 438 (3F_Lounge)

Kenji Ishikawa(Nagoya Univ.), Mitsuhiro Omura(Toshiba Memory)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[20p-438-1] Selective Cyclic Etching of Lanthanum Oxide Using Formation and Desorption of Organo-Lanthanum Complex

〇Yoshihide Yamaguchi¹, Kazunori Shinoda¹, Sumiko Fujisaki¹, Yutaka Kouzuma², Kohei Kawamura², Masaru Izawa² (1.Hitachi, Ltd. R&D group, 2.Hitachi High-technologies)

2:00 PM - 2:15 PM

[20p-438-2] 【Highlighted Presentation】Demonstration of Self-limiting Characteristics and Selectivity Control in Annealing Steps for Rapid Thermal-Cyclic ALE

〇Kazunori Shinoda^1,3, Hiroyuki Kobayashi¹, Nobuya Miyoshi², Kohei Kawamura², Masaru Izawa², Kenji Ishikawa³, Masaru Hori³ (1.Hitachi R&D, 2.Hitachi High-Tech, 3.Nagoya Univ.)

2:15 PM - 2:30 PM

▲ [20p-438-3] Atomic-layer etching (ALE) of magnetic films by Hexafluoroacetylacetone (HFAC) molecules

〇(D)Abdulrahman Hikmat Basher¹, Michiro Isobe¹, Tomoko Ito¹, Masato Kiuchi², Take Takeuchi³, Kazuhiro Karahashi¹, Ikutaro Hamada¹, Yoshitada Morikawa¹, Satoshi Hamaguchi¹ (1.Osaka Univ., 2.AIST, 3.Nara Womens Univ.)

2:30 PM - 2:45 PM

△ [20p-438-4] Hydrogen plasma modification mechanism of silicon nitride surface by in-situ surface analysis

〇(M1)Kazuya Nakane¹, Rene Henricus Jozef Vervuurt², Takayoshi Tsutsumi¹, Akiko Kobayashi², Nobuyoshi Kobayashi², Masaru Hori³ (1.Nagoya Univ. Eng., 2.ASM Japan, 3.Inst. of innovation for Future Society, Nagoya Univ.)

2:45 PM - 3:00 PM

△ [20p-438-5] Effects to addition of H₂into Cl₂plasma at high temperature for etching of GaN

〇(M1)Takahiro Omichi¹, Tanide Atsushi^1,2, Ishikawa Kenji¹, Tsutsumi Takayoshi¹, Kondo Hiroki¹, Sekine Makoto¹, Hori Masaru¹ (1.Nagoya Univ., 2.SCREEN Holdings Co., Ltd.)

3:00 PM - 3:15 PM

△ [20p-438-6] Photoresist Removal Treatment Using Atmospheric-Pressure Microwave O₂/CF₄ Plasma

〇Shota Ishikawa¹, Haruka Suzuki¹, Tsuyoshi Honda², Hirotaka Toyoda¹ (1.Nagoya Univ., 2.Nissin)

3:15 PM - 3:30 PM

[20p-438-7] Study of formation of sidewall striation in high aspect ratio hole etching

〇Junichi Hashimoto¹, Mitsuhiro Omura¹, Takahiro Adachi¹, Yusuke Kondo¹, Masao Ishikawa¹, Junko Abe¹, Takaya Matsushita¹, Hisataka Hayashi¹ (1.Toshiba Memory Corp.)

3:30 PM - 3:45 PM

[20p-438-8] SiO₂ and Si etching reactions by SFx⁺ ion bombardment

〇Kazuhiro Karahashi¹, Tomoko Ito¹, Junichi Hashimoto², Mitsuhiro Omura², Hisataka Hayashi², Satoshi Hamaguchi¹ (1.Graduate School of Engineering, Osaka Univ., 2.Toshiba Momory Corporation)

3:45 PM - 4:00 PM

[20p-438-9] Electronic properties and dissociation channels of C₂H_xF_y compounds (III)

〇Toshio Hayashi¹, Makoto Sekine¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ.)

4:00 PM - 4:15 PM

▼ [20p-438-10] Physical etching of surfaces made of Lennard-Jones atoms: a Molecular Dynamics study

〇Nicolas Aini Mauchamp¹, Michiro Isobe¹, Satoshi Hamaguchi¹ (1.Osaka University)

4:15 PM - 4:30 PM

▼ [20p-438-11] Molecular dynamics simulation of hole etching in SiO₂by energetic fluorocarbon ion injection

〇(M1)Charisse Cagomoc¹, Michiro Isobe¹, Kazuhiro Karahashi¹, Takuya Hirohashi², Junichi Hashimoto², Mitsuhiro Omura², Hisataka Hayashi², Satoshi Hamaguchi¹ (1.Osaka University, 2.Toshiba Memory Corp.)

4:45 PM - 5:00 PM

[20p-438-12] [Young Scientist Presentation Award Speech] First-principles-based prediction of the local structures damaged by plasma exposures (2)

〇Yuuta Yoshikawa¹, Koji Eriguchi¹ (1.Kyoto Univ.)

5:00 PM - 5:15 PM

△ [20p-438-13] Effects of Nitrogen Ambient Annealing on the Recovery of Plasma-induced Defect Structures in Silicon Nitride Films

〇Tomohiro Kuyama¹, Yuta Yoshikawa¹, Yoshihiro Sato¹, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ.)

5:15 PM - 5:30 PM

△ [20p-438-14] A Characterization Technique of Plasma Process-Induced Latent Defects in Si Substrate by Isothermal Capacitance Transient Spectroscopy

〇Takashi Hamano¹, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ.)

5:30 PM - 5:45 PM

[20p-438-15] Generation & annihilation of plasma-induced defects ~ defect monitoring on c-Si substrate ~

〇Shota Nunomura¹, Isao Sakata¹, Koji Matsubara¹ (1.AIST RCPV)

5:45 PM - 6:00 PM

[20p-438-16] Mechanism of fluorine-enhanced diffusion in III-V semiconductor compounds

〇Yoshifumi Zaizen¹, Fukasawa Masanaga¹, Minari Hideki¹ (1.Sony Semiconductor Solutions Coporation)

6:00 PM - 6:15 PM

[20p-438-17] Nitriding treatment by Active Screen Plasma and its evaluation ２

〇(PC)Susumu Ichimura¹, Seigo Takashima¹, Ippei Tsuru², Daichi Ohkubo², Hideaki Matsuo², Mineo Goto² (1.Nagoya Industries Promotion Corporation, 2.NAKANIHON-RO KOGYO CO., LTD.)

6:15 PM - 6:30 PM

[20p-438-18] Effect of H₂-N₂ plasma treatment on surface properties of titanium alloy

〇Koki Niimura¹, Zhongqiu Lin¹, Toshiaki Suzuki^1,2, Masaaki Niwa¹, Mitsuya Motohashi¹ (1.Tokyo Denki Univ., 2.JEOL)

6:30 PM - 6:45 PM

△ [20p-438-19] Improvement of Uniformity on Microwave Excited Plasma Production Using Slot Antenna

〇Takeshi Aizawa¹, Taishin Shimada¹, Yu Tanakajima¹, Tatsuo Ishijima¹, Yasunori Tanaka¹, Yoshihiko Uesugi¹ (1.Kanazawa Univ.)

6:45 PM - 7:00 PM

△ [20p-438-20] Surface Modification of Polytetrafluoroethylene by Atmosheric Pressure Plasma of Ar/Water Vapor Mixture Gas

〇(B)Masahiko Tani¹, Hideki Yajima², Hiroshi Furuta¹, Akimitsu Hatta¹ (1.Kochi Univ. Technol., 2.ORC Manufacturing)

7:00 PM - 7:15 PM

△ [20p-438-21] Influence of plasma gas temperature and gas species on surface treatment using atmospheric pressure plasma

〇Shohei Moriya¹, Yusuke Iijima¹, Yuma Suenaga¹, Shunsuke Watanabe², Hidekazu Miyahara³, Chiaki Sato², Akitoshi Okino¹ (1.Tokyo Tech FIRST, 2.Tokyo Tech MSL, 3.School of Science, Tokyo Univ.)

Session information

[20p-438-1~21] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[20p-438-1] Selective Cyclic Etching of Lanthanum Oxide Using Formation and Desorption of Organo-Lanthanum Complex

[20p-438-2] 【Highlighted Presentation】Demonstration of Self-limiting Characteristics and Selectivity Control in Annealing Steps for Rapid Thermal-Cyclic ALE

▲ [20p-438-3] Atomic-layer etching (ALE) of magnetic films by Hexafluoroacetylacetone (HFAC) molecules

△ [20p-438-4] Hydrogen plasma modification mechanism of silicon nitride surface by in-situ surface analysis

△ [20p-438-5] Effects to addition of H₂into Cl₂plasma at high temperature for etching of GaN

△ [20p-438-6] Photoresist Removal Treatment Using Atmospheric-Pressure Microwave O₂/CF₄ Plasma

[20p-438-7] Study of formation of sidewall striation in high aspect ratio hole etching

[20p-438-8] SiO₂ and Si etching reactions by SFx⁺ ion bombardment

[20p-438-9] Electronic properties and dissociation channels of C₂H_xF_y compounds (III)

▼ [20p-438-10] Physical etching of surfaces made of Lennard-Jones atoms: a Molecular Dynamics study

▼ [20p-438-11] Molecular dynamics simulation of hole etching in SiO₂by energetic fluorocarbon ion injection

[20p-438-12] [Young Scientist Presentation Award Speech] First-principles-based prediction of the local structures damaged by plasma exposures (2)

△ [20p-438-13] Effects of Nitrogen Ambient Annealing on the Recovery of Plasma-induced Defect Structures in Silicon Nitride Films

△ [20p-438-14] A Characterization Technique of Plasma Process-Induced Latent Defects in Si Substrate by Isothermal Capacitance Transient Spectroscopy

[20p-438-15] Generation & annihilation of plasma-induced defects ~ defect monitoring on c-Si substrate ~

[20p-438-16] Mechanism of fluorine-enhanced diffusion in III-V semiconductor compounds

[20p-438-17] Nitriding treatment by Active Screen Plasma and its evaluation ２

[20p-438-18] Effect of H₂-N₂ plasma treatment on surface properties of titanium alloy

△ [20p-438-19] Improvement of Uniformity on Microwave Excited Plasma Production Using Slot Antenna

△ [20p-438-20] Surface Modification of Polytetrafluoroethylene by Atmosheric Pressure Plasma of Ar/Water Vapor Mixture Gas

△ [20p-438-21] Influence of plasma gas temperature and gas species on surface treatment using atmospheric pressure plasma

Authentication

Session information

[20p-438-1~21] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

▲ [20p-438-3] Atomic-layer etching (ALE) of magnetic films by Hexafluoroacetylacetone (HFAC) molecules

△ [20p-438-4] Hydrogen plasma modification mechanism of silicon nitride surface by in-situ surface analysis

△ [20p-438-5] Effects to addition of H2 into Cl2 plasma at high temperature for etching of GaN

△ [20p-438-6] Photoresist Removal Treatment Using Atmospheric-Pressure Microwave O2/CF4 Plasma

▼ [20p-438-10] Physical etching of surfaces made of Lennard-Jones atoms: a Molecular Dynamics study

▼ [20p-438-11] Molecular dynamics simulation of hole etching in SiO2 by energetic fluorocarbon ion injection

△ [20p-438-13] Effects of Nitrogen Ambient Annealing on the Recovery of Plasma-induced Defect Structures in Silicon Nitride Films

△ [20p-438-14] A Characterization Technique of Plasma Process-Induced Latent Defects in Si Substrate by Isothermal Capacitance Transient Spectroscopy

△ [20p-438-19] Improvement of Uniformity on Microwave Excited Plasma Production Using Slot Antenna

△ [20p-438-20] Surface Modification of Polytetrafluoroethylene by Atmosheric Pressure Plasma of Ar/Water Vapor Mixture Gas

△ [20p-438-21] Influence of plasma gas temperature and gas species on surface treatment using atmospheric pressure plasma

Authentication

△ [20p-438-5] Effects to addition of H₂into Cl₂plasma at high temperature for etching of GaN

△ [20p-438-6] Photoresist Removal Treatment Using Atmospheric-Pressure Microwave O₂/CF₄ Plasma

▼ [20p-438-11] Molecular dynamics simulation of hole etching in SiO₂by energetic fluorocarbon ion injection