The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[18a-233-1~10] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Tue. Sep 18, 2018 9:30 AM - 12:00 PM 233 (233)

Masato Sone(Tokyo Tech)

11:30 AM - 11:45 AM

[18a-233-9] Uncooled Infrared Sensor Using Electrostatically Driven Torsional Resonator

Tomoya Hatagaki1, Shinya Kumagai2, 〇Minoru Sasaki1 (1.Toyota Tech. Inst., 2.Meijyo Univ.)

Keywords:Uncooled Infrared Sensor, Torsional Resonator, Mode Control

A new torsional resonator is designed for the uncooled MEMS infrared sensor. The electrostatic actuation uses the fringe field from the vertical sidewall. The torsion bar is tensioned using the film stress and its spring constants are designed for making the torsional displacement larger than the bending displacement. The fabricated sensor can control the torsional mode to be the 1st mode. Coupling of the thermal bending to the torsional rigidity will change the resonant frequency. From this phenomenon, the infrared is detected.