[19a-224A-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19a-224A-3] Estimation of electric field in β-Ga₂O₃-based MOS photodiodes

〇Makoto Hashikawa¹, Sansei Tomizawa¹, Kohei Sasaki², Akihito Kuramata², Toshiyuki Oishi¹, Takayoshi Oshima¹ (1.Saga Univ., 2.Tamura Corp. & NCT, Inc)

Keywords:Ga2O3

Because band edge absorption begins with approximately 270nm, in β-Ga2O3, application is expected to a light detecting element having light of the sun window shade properties. However, as for the reported element, a lot of Schottky Barrier Diode (SBD) leak to date at opposite direction voltage time to apply it, and the avalanche amplification is not seen because an electric current is big. Therefore I introduced the concept of the metal insulator semiconductor (MIS) and succeeded in controlling a leak electric current and became able to apply a high electric field. Because I estimated the internal electric field of the diode by simulation this time, I report it.