[20a-233-1~9] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

△ [20a-233-5] Grain Growth Control of LTPS Thin Films by Selective Laser Annealing

〇(B)Takahiro Yamada¹, Kaname Imokawa^1,2, Daisuke Nakamure¹, Tetsuya Goto³, Hiroshi Ikenoue^1,2 (1.Kyushu Univ., 2.Dept. of Gigaphoton Next GLP, Kyushu Univ., 3.Tohoku Univ.)

Keywords:Laser Annealing, Poly-Si, TFT

We propose a novel grain growth method for low-temperature crystallization of poly-Si thin films with selective laser annealing. In this method, laser beam with multi lines are selectively irradiated to a channel region of a TFT. Then, lateral grain growth is induced at low fluence regions of the multi-line beam. Therefore, the number of grain boundaries at the channel region can be controlled. In this presentation, we will report TFT properties with the grain growth controlled.