[20a-CE-1~12] 13.5 デバイス／集積化技術

▼ [20a-CE-2] Reduced Subthreshold Slope Variability at High Temperature in Bulk and SOTB MOSFETs

〇(M2)Shuang Gao¹、Tomoko Mizutani¹、Kiyoshi Takeuchi¹、Masaharu Kobayashi¹、Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo)

キーワード：variability, temperature, subthreshold slope

This paper presents a new finding that subthreshold slope (SS) variability is reduced at high temperature, owing to a negative correlation between SS and its temperature coefficient dSS/dT. To explain this, an effective current path model is proposed, and verified by 3D TCAD simulation.