[20a-CE-1~12] 13.5 Semiconductor devices and related technologies

[20a-CE-4] Application of post-fabrication cell stability self-improvement using multiple stress technique to bulk SRAM cell array

〇Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo)

Keywords:SRAM, variability, cell stability

The multiple stress technique was applied to bulk SRAM array for post-fabrication cell stability self-improvement. Compared to the single stress technique, effective self-improvement of cell stability was demonstrated.