[20a-PA6-1~9] 15.7 Crystal characterization, impurities and crystal defects

[20a-PA6-5] Evaluation of Si SJ-MOSFET by multifunctional scanning probe microscope

〇(M1)Sho Masuda¹, Yuki Uchida¹, Atsushi Doi¹, Nobuo Satoh¹, Hidekazu Yamamoto¹ (1.Chiba Inst. of Tech.)

Keywords:silicon, Scanning probe microscope, Scanning capacitance force microscope

High performance silicon power devices have been achieved by optimizing internal structures and improving dopant control.
However, devices compatible with high withstand voltage and large current energization have been miniaturized, the internal structure is further complicated, and evaluation of dopant distribution is important.
Therefore, we report the impurity distribution inside the Si SJ-MOSFET (Super Junction MOSFET) was evaluated by the Scanning Capacitance Force Microscope (SCFM) method by scanning probe microscope