[20a-PB4-1~8] 3.13 Semiconductor optical devices

[20a-PB4-4] Characteristic improvement by annealing of 1550 nm-band quantum dots ridge-structure laser formed by dry etching

〇(M2)Yota Akashi¹, Shohei Isawa¹, Atsushi Matsumoto², Kouichi Akahane², Yuichi Matsushima³, Hiroshi Ishikawa¹, Katsuyuki Utaka¹ (1.Waseda Univ., 2.NICT, 3.GCS Waseda Univ.)

Keywords:Quantum Dots, semiconductor

In recent years, 1550 nm wavelength band quantum dot lasers (QD-LD) have attracted attention as a light source with low threshold and high luminescent efficiency, and expected as a broadband light source by quantum dot intermixing (QDI). So far, we have confirmed the threshold increase of stripe QD-LD by dry etching, and this time we report improvement of characteristics by intermixing exterior of ridge by annealing.