15:15 〜 15:30
▼ [20p-141-5] Electrical characteristics of ferroelectric undoped HfO2 directly deposited on Si(100) utilizing Kr/O2 sputtering
キーワード：ferroelectric, undoped HfO2
In order to realize ferroelectric field-effect transistors (FeFETs), the growth of metastable orthorhombic HfO2 on Si substrates is necessary.
Utilizing Ar/O2 sputtering, we obtained the memory window (MW) of 0.84 V from the C-V characteristics for the undoped HfO2 directly deposited on p-Si(100) [1,2]. However, there was a stretch in the C-V curves at accumulation region, which indicated the existence of interface traps between HfO2 and Si.
In this research, the ferroelectric properties of undoped HfO2 directly deposited on Si substrates utilizing Kr/O2 sputtering were investigated.
Utilizing Ar/O2 sputtering, we obtained the memory window (MW) of 0.84 V from the C-V characteristics for the undoped HfO2 directly deposited on p-Si(100) [1,2]. However, there was a stretch in the C-V curves at accumulation region, which indicated the existence of interface traps between HfO2 and Si.
In this research, the ferroelectric properties of undoped HfO2 directly deposited on Si substrates utilizing Kr/O2 sputtering were investigated.