[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-12] Development of SiC Epitaxial Reactor Cleaning Process Using Chlorine Trifluoride Gas -Evaluation of Purified Pyrolytic Carbon as Susceptor Coating Material-

〇Keisuke Kurashima¹, Hitoshi Habuka¹, Hideki Ito², Shinichi Mitani², Yoshinao Takahashi³ (1.Yokohama Nat. Univ., 2.NuFlare Technologies, 3.Kanto Denka Kogyo)

Keywords:chlorine trifluoride, cleaning

The fluorination of purified pyrolytic carbon film was evaluated for the application of the SiC CVD reactor cleaning. At the temperatures less than 570 ℃, the fluorination was moderate and did not deteriorate the surface morphology.