[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-14] Corrosion resistance of AlN to chlorine trifluoride gas for SiC etching

〇Miyu Haruguchi¹, Ryohei Kawasaki¹, Hitoshi Habuka¹, Takahashi Yoshinao² (1.Yokohama Nat. Univ, 2.Kanto Denka Kogyo)

Keywords:Chlorine trifluoride gas, etching, ALN

In order to protect components inside the etching equipment from corrosion due to high reactivity of chlorine trifluoride gas for rapidly processing the surface of silicon carbide in the semiconductor manufacturing process, it is assumed that the protective film material against chlorine trifluoride gas is used, The corrosion resistance was investigated and the details are reported.