The 79th JSAP Autumn Meeting, 2018

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Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Sep 20, 2018 1:45 PM - 6:00 PM 221C (2Ｆ_Lounge1)

Shin-Ichiro Kuroki(Hiroshima Univ.), Kazuma Eto(AIST)

2:00 PM - 2:15 PM

[20p-221C-2] Millisecond Annealing for High Speed Activation of Impurity in 4H-SiC Wafer by Nitrogen-boosted Atmospheric Pressure Thermal Plasma Jet

〇(M1)Seiki Kawasaki1, Hiroaki Hanafusa1, Seiichiro Higashi1 (1.Hiroshima Universiy. ADSM)

Keywords:SiC, Activation