The 79th JSAP Autumn Meeting, 2018

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Sep 20, 2018 1:45 PM - 6:00 PM 221C (2Ｆ_Lounge1)

Shin-Ichiro Kuroki(Hiroshima Univ.), Kazuma Eto(AIST)

3:15 PM - 3:30 PM

[20p-221C-6] Effect of the shape of SiC solute source on grown crystals in solution growth of SiC using Cr solvent

〇Kouki Suzuki1, Toshinori Taishi1 (1.Shinshu Univ. (Eng.))

Keywords:Solution growth of SiC, Bulk crystal growth