2018年第79回応用物理学会秋季学術講演会

講演情報

シンポジウム(口頭講演)

シンポジウム » ナノエレクトロニクス材料・デバイス研究開発を目指した先端イオン顕微鏡技術

[20p-233-1~10] ナノエレクトロニクス材料・デバイス研究開発を目指した先端イオン顕微鏡技術

2018年9月20日(木) 13:30 〜 18:00 233 (233)

米谷 玲皇(東大)、小川 真一(産総研)

14:00 〜 14:15

[20p-233-2] Nanopatterning by helium ion beam: Only as good as the sample

〇(PC)Marek Edward Schmidt1、Ogawa Shinichi2、Mizuta Hiroshi1,3 (1.JAIST、2.AIST、3.Hitachi Cambridge)

キーワード:helium ion beam milling, graphene, nanomesh

Since the commercial introduction of the gas field ion source (GFIS) that is at the heart of focused gas (light) ion beam systems, unprecedented milling resolution and versatility has been achieved. Thanks to the atomically small yet incredibly bright source (only ions generated from a single tip atom are directed on the sample) and the shorter wavelength of light ions compared to electrons, very narrow beam diameters down to 0.25 nm have been achieved. Such beams have been used to pattern various materials, including gold to form plasmonic antennae [1], graphene nanoribbons [2], graphene nanomesh [3] or investigate inner forces in graphene nanoscrolls [4].In this presentation, we will share our experience in sample preparation for HIM milling and discuss strategies for successful experiments.